Understanding the STWA58N65DM2AG Power MOSFET: A Comprehensive Analysis


Introduction

From smartphones to electric vehicles, electronic devices have become an indispensable part of our lives. And at the heart of these devices are power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) that control and regulate the flow of electrical current. In this blog post, we will take an in-depth look at the STWA58N65DM2AG power MOSFET and explore its features, applications, and benefits.

Overview of the STWA58N65DM2AG

The STWA58N65DM2AG is a high-performance power MOSFET developed by STMicroelectronics. This N-channel MOSFET belongs to the MDmesh? M2 series and is designed specifically for applications requiring high efficiency and reliability. It features a voltage rating of 650V and a maximum current rating of 56A, making it suitable for a wide range of power electronics applications.

Key Features and Benefits

1. Low On-Resistance: The STWA58N65DM2AG offers a low on-resistance of 53 milliohms, resulting in reduced power losses and increased efficiency.

2. Enhanced Thermal Performance: With a low thermal resistance and advanced packaging technology, this MOSFET can dissipate heat effectively, improving overall system reliability.

3. Fast Switching Speed: The STWA58N65DM2AG has a fast switching speed, ensuring rapid transition between the on and off states. This enables it to handle high-frequency switching applications with ease.

4. Avalanche Energy Rating: The MOSFET has a high avalanche energy rating, making it robust and reliable in harsh operating conditions.

5. Higher Power Density: Its compact size and high power density make the STWA58N65DM2AG ideal for space-constrained applications where efficiency and thermal performance are paramount.

Applications

The STWA58N65DM2AG MOSFET finds applications in various industries, including:

1. Power Supplies: It can be used in AC-DC and DC-DC converters, switching power supplies, and uninterruptible power supplies (UPS).

2. Motor Control: The MOSFET is suitable for motor control applications such as electric vehicles, hybrid electric vehicles, and motor drives.

3. Lighting: It can be used in LED lighting systems, street lighting, and general lighting applications.

4. Industrial Automation: The MOSFET is well-suited for industrial automation systems, robotic control, and factory automation equipment.

Performance Comparison

To understand the performance of the STWA58N65DM2AG in comparison to similar MOSFETs in the market, let's consider its key specifications:

1. On-Resistance: The STWA58N65DM2AG offers a low on-resistance of 53 milliohms, outperforming many competing MOSFETs with higher on-resistance values.

2. Avalanche Energy Rating: With an avalanche energy rating of 1.4 mJ, it exceeds the capabilities of several competing devices, ensuring high reliability.

3. Switching Speed: The STWA58N65DM2AG boasts a fast switching speed, enabling efficient operation in high-frequency applications.

Conclusion

The STWA58N65DM2AG power MOSFET from STMicroelectronics is an advanced semiconductor device that offers high efficiency, reliability, and superior performance. Its low on-resistance, enhanced thermal management, fast switching speed, and robustness in harsh conditions make it an excellent choice for various applications, including power supplies, motor control, lighting, and industrial automation. With its exceptional specifications and performance, the STWA58N65DM2AG is poised to drive innovation in the field of power electronics.

Note: This blog post has provided an overview of the STWA58N65DM2AG power MOSFET, its features, and applications. It aims to educate readers about this specific semiconductor device and does not constitute a product endorsement or promotion.


STWA58N65DM2AG

STWA58N65DM2AG

Part Number :
STWA58N65DM2AG
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 650V 48A TO247
Datasheet :
STWA58N65DM2AG.pdf
Unit Price :
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In Stock :
3087
Lead Time :
To be Confirmed
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    STWA58N65DM2AG Specifications

    Packaging:
    Tube
    Series:
    Automotive, AEC-Q101
    ProductStatus:
    Preliminary
    FETType:
    N-Channel
    Technology:
    MOSFET (Metal Oxide)
    DraintoSourceVoltage(Vdss):
    650 V
    Current-ContinuousDrain(Id)@25°C:
    48A (Tc)
    DriveVoltage(MaxRdsOnMinRdsOn):
    -
    RdsOn(Max)@IdVgs:
    -
    Vgs(th)(Max)@Id:
    -
    GateCharge(Qg)(Max)@Vgs:
    -
    Vgs(Max):
    -
    InputCapacitance(Ciss)(Max)@Vds:
    -
    FETFeature:
    -
    PowerDissipation(Max):
    -
    OperatingTemperature:
    -
    MountingType:
    Through Hole

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