Understanding the STB12NM50T4 N-Channel MOSFET for Power Applications
When it comes to power electronics, MOSFETs play a vital role in switching circuits and power conversion applications. STB12NM50T4 is one such N-channel MOSFET that has gained widespread popularity owing to its high performance and efficiency. In this blog post, we will take a deep dive into this power MOSFET and understand its characteristics, applications, and practical considerations for designing power systems.
Overview of STB12NM50T4
The STB12NM50T4 is a 500V N-channel power MOSFET that has been designed using STMicroelectronics' STripFET? technology. With a maximum drain current rating of 11A and a low on-resistance of 0.34?, this MOSFET is ideally suited for power switching applications. It also offers excellent dynamic performance, gate charge characteristics, and switching speeds, making it ideal for high-frequency switching applications.
Characteristics of STB12NM50T4
The STB12NM50T4 MOSFET has several important features that make it a preferred choice for various power electronics applications. Some of its key characteristics include:
1. High Breakdown Voltage: The STB12NM50T4 MOSFET has a breakdown voltage rating of 500V, allowing it to operate efficiently in high voltage circuits.
2. Low On-resistance: With an on-resistance of 0.34?, the STB12NM50T4 MOSFET dissipates less power and increases the overall system efficiency.
3. Fast Switching Speeds: The STB12NM50T4 MOSFET offers fast switching times and low gate charge characteristics, ensuring that the MOSFET can handle rapid switching cycles.
4. Extended Safe Operating Area (SOA): The STB12NM50T4 MOSFET has an extended safe operating area, making it more robust and reliable than other MOSFETs in similar categories.
Applications of STB12NM50T4
The STB12NM50T4 MOSFET is used in a wide range of power electronics applications where high voltage and high current switching is required. Some of the key applications of STB12NM50T4 MOSFET include:
1. Power Supplies: STB12NM50T4 MOSFETs are commonly used in power supply units (PSUs) to regulate the output voltage and current.
2. Motor Control: STB12NM50T4 MOSFETs are ideal for controlling motors in industrial applications as they can handle high-voltage and high-current requirements.
3. Lighting: The STB12NM50T4 MOSFET is used in various lighting applications such as LED light drivers and ballasts.
4. Audio Amplifiers: The STB12NM50T4 MOSFET can be used in audio amplifiers to drive high-powered speakers.
Design Considerations
When designing power electronics applications using the STB12NM50T4 MOSFET, there are several critical factors to consider. These include:
1. Heat Dissipation: The STB12NM50T4 MOSFET generates heat during operation, and adequate thermal management is essential to prevent thermal runaway and failure.
2. Gate Driver Circuit: A proper gate driver circuit design is essential for efficient and reliable operation of this MOSFET.
3. Power Supply: The power supply for the MOSFET should be designed to handle high current requirements and provide clean power to prevent damage to the MOSFET.
4. Protection Circuitry: It is important to implement protection circuitry such as overvoltage, overcurrent, and thermal protections to safeguard the MOSFET and the system.
Conclusion
In conclusion, the STB12NM50T4 N-channel MOSFET is a high-performance device that is widely used in various power electronics applications. It offers an excellent balance of price, performance, and reliability, making it an ideal choice for power system designers. In this post, we have discussed the characteristics, applications, and design considerations of the STB12NM50T4 MOSFET. By following the design considerations, power system designers can leverage the performance benefits of the STB12NM50T4 MOSFET and design efficient and reliable power systems.
STB12NM50T4
- Part Number :
- STB12NM50T4
- Manufacturer :
- STMicroelectronics
- Description :
- MOSFET N-CH 550V 12A D2PAK
- Datasheet :
-
STB12NM50T4.pdf
- Unit Price :
- Request a Quote
- In Stock :
- 3753
- Lead Time :
- To be Confirmed
- Quick Inquiry :
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STB12NM50T4 Specifications
- Packaging:
- Tape & Reel (TR),Cut Tape (CT)
- Series:
- MDmesh™
- ProductStatus:
- Active
- FETType:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- DraintoSourceVoltage(Vdss):
- 550 V
- Current-ContinuousDrain(Id)@25°C:
- 12A (Tc)
- DriveVoltage(MaxRdsOnMinRdsOn):
- 10V
- RdsOn(Max)@IdVgs:
- 350mOhm @ 6A, 10V
- Vgs(th)(Max)@Id:
- 5V @ 50µA
- GateCharge(Qg)(Max)@Vgs:
- 39 nC @ 10 V
- Vgs(Max):
- ±30V
- InputCapacitance(Ciss)(Max)@Vds:
- 1000 pF @ 25 V
- FETFeature:
- -
- PowerDissipation(Max):
- 160W (Tc)
- OperatingTemperature:
- -65°C ~ 150°C (TJ)
- MountingType:
- Surface Mount
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